CGD65B130S2-T13 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products_SMCC_Chip _integrated circuit IC_connector_passive device_semiconductor

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CGD65B130S2-T13

CGD65B130S2-T13

Part Number	CGD65B130S2-T13
Manufacturer	Cambridge GaN Devices
Other Part Numbers	4768-CGD65B130S2-T13TR-ND 4768-CGD65B130S2-T13CT-ND 4768-CGD65B130S2-T13DKR-ND 4768-CGD65B130S2-T13TR 4768-CGD65B130S2-T13DKR 4768-CGD65B130S2-T13CT
Description	650V GAN HEMT, 130MOHM, DFN5X6.
Detailed Description	650 V 12A (Tc) Surface Mount 8-DFN (5x6)
Manufacturer Standard Lead Time	26 weeks
Datasheet	Datasheet

Product Attributes

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Cambridge GaN Devices
Series		ICeGaN™
Packaging		Tape & Reel (TR) Cut Tape (CT)
Part Status		Active
Package / Case		8-PowerVDFN
Mounting Type		Surface Mount
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C		12A (Tc)
Rds On (Max) @ Id, Vgs		182mOhm @ 900mA, 12V
FET Feature		Current Sensing
Vgs(th) (Max) @ Id		4.2V @ 4.2mA
Supplier Device Package		8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)		9V, 20V
Vgs (Max)		+20V, -1V
Drain to Source Voltage (Vdss)		650 V
Gate Charge (Qg) (Max) @ Vgs		2.3 nC @ 12 V

Documents & Media

RESOURCE TYPE		LINK
Datasheets		CGD65B130S2-T13

Environmental & Export Classifications

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

In Stock: 4885

Can ship immediately.

QUANTITY

PACKAGING	QUANTITY	UNIT PRICE	EXT PRICE
Cut Tape (CT)	1	$6.42	$6.42
Total Amount: $6.42

Tape & Reel (TR)

QUANTITY	UNIT PRICE	EXT PRICE
5,000	$3.00	$15,000.00

Cut Tape (CT)

QUANTITY	UNIT PRICE	EXT PRICE
1	$6.42	$6.42
10	$5.39	$53.90
100	$4.36	$436.00
500	$3.88	$1,940.00
1,000	$3.32	$3,320.00
2,000	$3.13	$6,260.00